When using field-effect transistors, these precautions should be remembered
When using field-effect transistors, these precautions should be remembered

Field Effect Transistor (FET), abbreviated as Field Effect Transistor. Conducted by majority carriers, also known as unipolar transistors. It belongs to voltage controlled semiconductor devices. The new generation of amplification components developed based on the principle of the transistor has three polarities: gate, drain, and source. Its characteristic is the extremely high internal resistance of the gate, which can reach several hundred megaohms using silicon dioxide material. It belongs to

Categories:Product knowledge Date:2024-10-11 Hits:227 View »


Can Schottky diodes be replaced with different packaging options?
Can Schottky diodes be replaced with different packaging options?

Schottky diodes have a wide range of applications in power supplies, frequency converters, and circuit protection due to their low forward voltage drop and fast switching characteristics. However, in practical applications, engineers may face the need for replacement of Schottky diode models, especially when the original model is out of stock or when there are design updates. At this point, it is crucial to understand whether Schottky diodes with different packaging can be interchanged to ensure

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Working principle of rectifier diode
Working principle of rectifier diode

Diode, also known as crystal diode, abbreviated as diode, and early vacuum electronic diode; It is an electronic device with unidirectional conduction current. There is a PN junction with two lead terminals inside the semiconductor diode, and this electronic device has the ability to transduce unidirectional current in the direction of the applied voltage. Generally speaking, a crystal diode is a p-n junction interface formed by sintering p-type and n-type semiconductors.

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The main reason for diode failure
The main reason for diode failure

For ordinary rectifier diodes, as long as there are fluctuations in the power grid, turning on and off of high-power equipment in the same network, lightning strikes, switch sparks, large capacity inductive loads, and large capacity capacitive loads in the application circuit, when the instantaneous voltage is higher than the reverse breakdown voltage value of the diode, voltage damage parameter attenuation or complete breakdown short circuit open circuit may occur.

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Cooling principle of surface mounted rectifier diode
Cooling principle of surface mounted rectifier diode

Surface mounted rectifier diodes generate heat during operation, and excessive heating can accelerate their service life. Therefore, the cooling system of rectifier diodes is developed. So what is the cooling principle of surface mount rectifier diodes?

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Does a switchable thyristor have unidirectional conductivity?
Does a switchable thyristor have unidirectional conductivity?

During the operation of a thyristor, its anode A and cathode K are connected to the power supply and load, forming the main circuit of the thyristor. The gate G and cathode K of the thyristor control the device connection of the thyristor, forming the control circuit of the thyristor.

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What are the conduction conditions of thyristors?
What are the conduction conditions of thyristors?

When a thyristor is subjected to reverse anode voltage, regardless of the voltage applied to the gate, the thyristor remains in an off state.

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Characteristics of Field Effect Transistor
Characteristics of Field Effect Transistor

It has the advantages of high input resistance (100000000-1000000000 Ω), low noise, low power consumption, large dynamic range, easy integration, no secondary breakdown phenomenon, wide safe working area, and good thermal stability. It has become a strong competitor to bipolar transistors and power transistors.

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Field effect transistor concept
Field effect transistor concept

The new generation of amplification components developed based on the principle of the transistor has three polarities: gate, drain, and source. Its characteristic is the extremely high internal resistance of the gate, which can reach several hundred megaohms using silicon dioxide material. It belongs to voltage controlled devices.

Categories:Product knowledge Date:2024-10-11 Hits:208 View »


Main characteristic parameters of field-effect transistors
Main characteristic parameters of field-effect transistors

The new generation of amplification components developed based on the principle of the transistor has three polarities: gate, drain, and source. Its characteristic is the extremely high internal resistance of the gate, which can reach several hundred megaohms using silicon dioxide material. It belongs to voltage controlled devices.

Categories:Product knowledge Date:2024-10-11 Hits:212 View »


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